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DMP22D4UFA
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -1.8V
Pulsed Drain Current (Note 6)
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
-330
-260
-400
-310
-250
-200
-310
-240
-800
mA
mA
mA
mA
mA
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
Steady state
t<10s
P D
R θ JA
T J, T STG
400
310
220
-55 to +150
mW
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20
-
-
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T c = 25°C
I DSS
I GSS
-
-
-
-
-
-
100
50
±100
nA
nA
V DS = -16V, V GS = 0V
V DS = -5V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.4
-
-1.0
V
V DS = V GS , I D = -250 μ A
-
-
1.2
1.5
1.9
2.4
V GS = -4.5V, I D = -100mA
V GS = -2.5V, I D = -50mA
Static Drain-Source On-Resistance
R DS (ON)
-
2.1
3.4
Ω
V GS = -1.8V, I D = -20mA
-
-
2.5
4.0
5
-
V GS = -1.5V, I D = -10mA
V GS = -1.2V, I D = -1mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
100
-
450
-0.6
-
-1.0
mS
V
V DS = -5V, I D = -125mA
V GS = 0V, I S = -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
28.7
4.2
2.9
0.4
0.4
0.08
0.06
5.8
5.7
31.1
16.4
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = -4.5V, V DS =- 10V,
I D = -250mA
V DD = -15V, V GS = -4.5V,
R G = 2 ? , I D = -200mA
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
2 of 6
www.diodes.com
May 2012
? Diodes Incorporated
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